SILICON-NITRIDE PASSIVANT FOR HGCDTE N+P DIODES

被引：22

作者：

KAJIHARA, N

SUDO, G

MIYAMOTO, Y

TANIKAWA, K

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 05期

关键词：

D O I：

10.1149/1.2095943

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1252 / 1255

页数：4

共 9 条

[1] PASSIVATION PROPERTIES AND INTERFACIAL CHEMISTRY OF PHOTOCHEMICALLY DEPOSITED SIO2 ON HG0.70CD0.30TE [J].

JANOUSEK, BK ;

CARSCALLEN, RC ;

BERTRAND, PA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1723-1725

[2] LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION METHOD UTILIZING AN ELECTRON-CYCLOTRON RESONANCE PLASMA [J].

MATSUO, S ;

KIUCHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04) :L210-L212

[3]

MATSUO S, 1984, 16TH INT C SOL STAT, P459

[4] HG1-XCDXTE NATIVE OXIDE REDUCTION BY CVD SIO2 [J].

RHIGER, DR ;

KVAAS, RE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :448-452

[5]

SUDO G, 1987, APPL PHYS LETT, V51, P521

[6]

Tanikawa K., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V686, P86, DOI 10.1117/12.936528

[7] LOW-FREQUENCY ADMITTANCE MEASUREMENTS ON THE HGCDTE/PHOTOX SIO2 INTERFACE [J].

TSAU, GH ;

SHER, A ;

MADOU, M ;

WILSON, JA ;

COTTON, VA ;

JONES, CE .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) :1238-1244

[8] ELECTRICAL-PROPERTIES OF THE SIO2-HGCDTE INTERFACE [J].

WILSON, JA ;

COTTON, VA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1985, 3 (01) :199-202

[9] (HGCD)TE-SIO2 INTERFACE STRUCTURE [J].

WILSON, JA ;

COTTON, VA ;

SILBERMAN, J ;

LASER, D ;

SPICER, WE ;

MORGEN, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1719-1722

← 1 →