FINE PATTERN-FORMATION OF GALLIUM-ARSENIDE BY INSITU ELECTRON-BEAM LITHOGRAPHY USING AN ULTRATHIN SURFACE OXIDE AS A RESIST

Formation of fine patterns such as lines and spots on a GaAs surface by in situ electron beam (EB) lithography is demonstrated. An ultrathin surface oxide (1 nm) of GaAs is used as a resist film, which can be patterned by EB-assisted etching. The minimum pattern size of less than 1.0 µm is obtained; it is limited by the electron beam shape in the present experiment. The EB-induced patterning of the oxide resist is not due to substrate heating or minority carrier generation, but to excitation of the sample surface and/or the chlorine atoms adsorbed on the oxide resist film. © 1990 IOP Publishing Ltd.