INFLUENCE OF SUBSTRATE DEFECTS ON THE STRUCTURE OF EPITAXIAL GAAS GROWN BY MOCVD

被引：11

作者：

WEYHER, JL

VANDEVEN, J

机构：

[1] Katholieke Univ, Nijmegen, Neth, Katholieke Univ, Nijmegen, Neth

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 88卷 / 02期

关键词：

The authors wish to thank Prof. Dr. L.J. Giling for his critical interest. This work was made possible by the Stichting voor Fundamenteel Onderzoek der Materie (FOM) with financial support from the Nederlandse Orgamsatie voor Zuiver Wetenschappelijk Onderzoek (ZWO). j~ van de Yen gratefully acknowledges the Philips Research Laboratories for their support;

D O I：

10.1016/0022-0248(88)90279-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

27

引用

收藏

页码：221 / 228

页数：8

相关论文

共 27 条

[1]

AOYAMA T, 1986, I PHYS C SER, V79, P19

[2] LOW DISLOCATION, SEMI-INSULATING IN-DOPED GAAS CRYSTALS [J].

BARRETT, DL ;

MCGUIGAN, S ;

HOBGOOD, HM ;

ELDRIDGE, GW ;

THOMAS, RN .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :179-184

[3] NATURE, ORIGIN AND EFFECT OF DISLOCATIONS IN EPITAXIAL SEMICONDUCTOR LAYERS [J].

BOOKER, GR ;

TITCHMARSH, JM ;

FLETCHER, J ;

DARBY, DB ;

HOCKLY, M ;

ALJASSIM, M .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :407-425

[4] THE EFFECT OF CRYSTAL DEFECTS ON DEVICE PERFORMANCE AND RELIABILITY [J].

CHIN, AK .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :582-596

[5]

DARBY DB, 1981, I PHYS C SER, V56, P595

[6]

DERAEDT W, 1987, IN PRESS 14TH P INT

[7]

DOBSON PS, 1977, I PHYS C SER A, V33, P419

[8] EVALUATION OF A NEW POLISH FOR GALLIUM ARSENIDE USING A PEROXIDE-ALKALINE SOLUTION [J].

DYMENT, JC ;

ROZGONYI, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) :1346-&

[9] STRUCTURAL ETCHING OF [001] AND [110] FACES OF VARIOUS AIIIBV COMPOUNDS [J].

GOTTSCHALCH, V .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (08) :939-947

[10] DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPING [J].

JACOB, G ;

DUSEAUX, M ;

FARGES, JP ;

VANDENBOOM, MMB ;

ROKSNOER, PJ .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) :417-424