STRUCTURAL ETCHING OF [001] AND [110] FACES OF VARIOUS AIIIBV COMPOUNDS

被引：7

作者：

GOTTSCHALCH, V

机构：

来源：

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY | 1979年 / 14卷 / 08期

关键词：

D O I：

10.1002/crat.19790140808

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The present paper discusses the use of selective photoetching with H3PO4:H2O2 for characterizing various AIIIBV compounds and detecting misfit dislocations in transition layers. For GaP, the results obtained are compared with those realized with the use of an AB etchant for which suitable conditions for the structural etching of {001} material and the characterization of cleavage faces are given. The direction of the dislocation line is inferred from the shape and orientation of etch pits. The etch figures of different types of misfit dislocations are discussed. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

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页码：939 / 947

页数：9

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共 14 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&

[2] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J].

ABRAHAMS, MS ;

WEISBERG, LR ;

BUIOCCHI, CJ ;

BLANC, J .

JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) :223-&

[3] ASYMMETRY OF MISFIT DISLOCATIONS IN HETEROEPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].

BARTELS, WJ ;

NIJMAN, W .

JOURNAL OF CRYSTAL GROWTH, 1977, 37 (03) :204-214

[4] CHARACTERIZATION OF VAPOR GROWN (001) GAAS1-XPX LAYERS BY SELECTIVE PHOTO-ETCHING [J].

BLOK, L .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :250-255

[5] EFFECT OF DISLOCATIONS ON GREEN ELECTROLUMINESCENCE EFFICIENCY IN GAP GROWN BY LIQUID-PHASE EPITAXY [J].

BRANTLEY, WA ;

LORIMOR, OG ;

DAPKUS, PD ;

HASZKO, SE ;

SAUL, RH .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) :2629-2637

[6] H3PO4 - ETCHING OF (001)-FACES OF INP, (GAIN)P, GAP, AND GA(ASP) [J].

GOTTSCHALCH, V ;

HEINIG, W ;

BUTTER, E ;

ROSIN, H ;

FREYDANK, G .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (05) :563-569

[7] ETCHING STUDIES OF IMPURITY PRECIPITATES IN PULLED GAP CRYSTALS [J].

IIZUKA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) :1190-&

[8] SELECTIVE PHOTOETCHING OF GALLIUM-ARSENIDE [J].

KUHNKUHNENFELD, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) :1063-+

[9] INTERPRETATION OF DISLOCATION CONTRAST IN X-RAY TOPOGRAPHS OF GAAS1-XPX [J].

MADER, S ;

BLAKESLEE, AE ;

ANGILELLO, J .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :4730-4734

[10] REVEAL OF DISLOCATION ETCH PITS ON (001) GAP WITH HOT PHOSPHORIC-ACID [J].

ROSIN, H ;

FREYDANK, G ;

KLEIN, R ;

BRUCHHOLZ, M ;

GOTTSCHALCH, V .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (01) :K13-&