INVESTIGATIONS OF THE ALTERED SURFACE FORMED DURING THE ION-ASSISTED ETCHING OF TITANIUM

被引:10
作者
OBRIEN, WL
RHODIN, TN
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 05期
关键词
D O I
10.1116/1.584469
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1244 / 1251
页数:8
相关论文
共 19 条
[1]   MODULATED ION-BEAM STUDIES OF PRODUCT FORMATION AND EJECTION IN ION-INDUCED ETCHING OF GAAS BY CL2 [J].
AMEEN, MS ;
MAYER, TM .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (04) :1152-1157
[2]   THE THERMAL AND ION-ASSISTED REACTIONS OF GAAS(100) WITH MOLECULAR CHLORINE [J].
BALOOCH, M ;
OLANDER, DR ;
SIEKHAUS, WJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :794-805
[3]   ANALYSIS OF THERMAL DESORPTION MASS-SPECTRA .1. [J].
CHAN, CM ;
ARIS, R ;
WEINBERG, WH .
APPLIED SURFACE SCIENCE, 1978, 1 (03) :360-376
[4]   ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J].
COBURN, JW ;
WINTERS, HF .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3189-3196
[5]   STUDIES ON THE MECHANISM OF CHEMICAL SPUTTERING OF SILICON BY SIMULTANEOUS EXPOSURE TO CL-2 AND LOW-ENERGY AR+ IONS [J].
DIELEMAN, J ;
SANDERS, FHM ;
KOLFSCHOTEN, AW ;
ZALM, PC ;
DEVRIES, AE ;
HARING, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1384-1392
[6]  
HABENSCHADEN E, 1984, SURF SCI, V138, P1147
[7]   MASS AND ENERGY-DISTRIBUTION OF PARTICLES SPUTTER ETCHED FROM SI IN A XEF2 ENVIRONMENT [J].
HARING, RA ;
HARING, A ;
SARIS, FW ;
DEVRIES, AE .
APPLIED PHYSICS LETTERS, 1982, 41 (02) :174-176
[9]   REACTION-MECHANISMS FOR THE PHOTON-ENHANCED ETCHING OF SEMICONDUCTORS - AN INVESTIGATION OF THE UV-STIMULATED INTERACTION OF CHLORINE WITH SI(100) [J].
JACKMAN, RB ;
EBERT, H ;
FOORD, JS .
SURFACE SCIENCE, 1986, 176 (1-2) :183-192
[10]   ARGON-ION ASSISTED ETCHING OF SILICON BY MOLECULAR CHLORINE [J].
KOLFSCHOTEN, AW ;
HARING, RA ;
HARING, A ;
DEVRIES, AE .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3813-3818