FORMATION OF A TISI2/N+POLY-SI LAYER BY RAPID LAMP HEATING AND ITS APPLICATION TO MOS DEVICES

被引：25

作者：

YACHI, T

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 07期

关键词：

D O I：

10.1109/EDL.1984.25895

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：217 / 220

页数：4

共 11 条

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