ASYMMETRIC CHARACTERISTICS OF INGAP/GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY

被引：8

作者：

LEE, TW

HOUSTON, PA

KUMAR, R

HILL, G

HOPKINSON, M

机构：

[1] Dept. of Electron. and Electr. Eng., Sheffield Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 03期

关键词：

D O I：

10.1088/0268-1242/7/3/026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Geometrically symmetric double-heterojunction bipolar transistors which have been fabricated in InGaP/GaAs show up differences in the shapes of output characteristics of the devices. This electrical asymmetry has been interpreted in terms of the lower junction being compositionally abrupt while the upper junction is graded. The differences in the junctions have been related to the sequence of growth of the layers.

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页码：425 / 428

页数：4

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