SPATIAL-RESOLUTION LIMITS IN ELECTRON-BEAM NANOLITHOGRAPHY

[1] SUB-20-NM-WIDE METAL LINES BY ELECTRON-BEAM EXPOSURE OF THIN POLY(METHYL METHACRYLATE) FILMS AND LIFTOFF [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 436 - 439

[2] BROERS A, 1976, J APPL PHYS, V29, P596

[3] RESOLUTION LIMITS OF PMMA RESIST FOR EXPOSURE WITH 50 KV ELECTRONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 166 - 170

[4] 250-A LINEWIDTHS WITH PMMA ELECTRON RESIST [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 392 - 394

[5] 10-NM LINEWIDTH ELECTRON-BEAM LITHOGRAPHY ON GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 38 - 40

[6] 400-A LINEWIDTH E-BEAM LITHOGRAPHY ON THICK SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 592 - 594

[7] INSITU VAPORIZATION OF VERY LOW-MOLECULAR WEIGHT RESISTS USING 1-2 NM DIAMETER ELECTRON-BEAMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1117 - 1120

[8] JOY D, UNPUB ELECTRON MICRO

[9] KYSER D, 6TH P INT C EL ION B, P205

[10] COMPUTER-SIMULATION OF ELECTRON-BEAM RESIST PROFILES [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (04) : 426 - 437

[1] SUB-20-NM-WIDE METAL LINES BY ELECTRON-BEAM EXPOSURE OF THIN POLY(METHYL METHACRYLATE) FILMS AND LIFTOFF [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 436 - 439

[2] BROERS A, 1976, J APPL PHYS, V29, P596

[3] RESOLUTION LIMITS OF PMMA RESIST FOR EXPOSURE WITH 50 KV ELECTRONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 166 - 170

[4] 250-A LINEWIDTHS WITH PMMA ELECTRON RESIST [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 392 - 394

[5] 10-NM LINEWIDTH ELECTRON-BEAM LITHOGRAPHY ON GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 38 - 40

[6] 400-A LINEWIDTH E-BEAM LITHOGRAPHY ON THICK SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 592 - 594

[7] INSITU VAPORIZATION OF VERY LOW-MOLECULAR WEIGHT RESISTS USING 1-2 NM DIAMETER ELECTRON-BEAMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1117 - 1120

[8] JOY D, UNPUB ELECTRON MICRO

[9] KYSER D, 6TH P INT C EL ION B, P205

[10] COMPUTER-SIMULATION OF ELECTRON-BEAM RESIST PROFILES [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (04) : 426 - 437