学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
ELECTROLUMINESCENCE STUDIES IN SILICON DIOXIDE FILMS CONTAINING TINY SILICON ISLANDS
被引:309
作者
:
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
DIMARIA, DJ
[
1
]
KIRTLEY, JR
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
KIRTLEY, JR
[
1
]
PAKULIS, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
PAKULIS, EJ
[
1
]
DONG, DW
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
DONG, DW
[
1
]
KUAN, TS
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
KUAN, TS
[
1
]
PESAVENTO, FL
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
PESAVENTO, FL
[
1
]
THEIS, TN
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
THEIS, TN
[
1
]
CUTRO, JA
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
CUTRO, JA
[
1
]
BRORSON, SD
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
BRORSON, SD
[
1
]
机构
:
[1]
MIT, CAMBRIDGE, MA 02139 USA
来源
:
JOURNAL OF APPLIED PHYSICS
|
1984年
/ 56卷
/ 02期
关键词
:
D O I
:
10.1063/1.333979
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:401 / 416
页数:16
相关论文
共 51 条
[11]
CONDUCTION STUDIES IN SILICON-NITRIDE - DARK CURRENTS AND PHOTOCURRENTS
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DIMARIA, DJ
ARNETT, PC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ARNETT, PC
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1977,
21
(03)
: 227
-
244
[12]
CHARGE TRANSPORT AND TRAPPING PHENOMENA IN OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
DIMARIA, DJ
DONG, DW
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
DONG, DW
FALCONY, C
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
FALCONY, C
THEIS, TN
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
THEIS, TN
KIRTLEY, JR
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
KIRTLEY, JR
TSANG, JC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
TSANG, JC
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
YOUNG, DR
PESAVENTO, FL
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
PESAVENTO, FL
BRORSON, SD
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
BRORSON, SD
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(10)
: 5801
-
5827
[13]
HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
DIMARIA, DJ
DONG, DW
论文数:
0
引用数:
0
h-index:
0
DONG, DW
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(05)
: 2722
-
2735
[14]
EXTENDED CYCLABILITY IN ELECTRICALLY-ALTERABLE READ-ONLY-MEMORIES
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
DIMARIA, DJ
DONG, DW
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
DONG, DW
FALCONY, C
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
FALCONY, C
BRORSON, SR
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
BRORSON, SR
[J].
ELECTRON DEVICE LETTERS,
1982,
3
(07):
: 191
-
195
[15]
RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
DIMARIA, DJ
EPHRATH, LM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
EPHRATH, LM
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
YOUNG, DR
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(06)
: 4015
-
4021
[16]
DUAL-ELECTRON-INJECTOR-STRUCTURE ELECTRICALLY ALTERABLE READ-ONLY-MEMORY MODELING STUDIES
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
DIMARIA, DJ
DEMEYER, KM
论文数:
0
引用数:
0
h-index:
0
DEMEYER, KM
DONG, DW
论文数:
0
引用数:
0
h-index:
0
DONG, DW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(09)
: 1047
-
1053
[17]
DIMARIA DJ, 1980, PHYSICS MOS INSULATO, P1
[18]
PREPARATION AND SOME PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED SI-RICH SIO2 AND SI3N4 FILMS
DONG, D
论文数:
0
引用数:
0
h-index:
0
DONG, D
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
IRENE, EA
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
YOUNG, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(05)
: 819
-
823
[19]
THE PHASE-COMPOSITION OF SIOX FILMS
DVURECHENSKY, AV
论文数:
0
引用数:
0
h-index:
0
DVURECHENSKY, AV
EDELMAN, FL
论文数:
0
引用数:
0
h-index:
0
EDELMAN, FL
RYAZANTSEV, IA
论文数:
0
引用数:
0
h-index:
0
RYAZANTSEV, IA
[J].
THIN SOLID FILMS,
1982,
91
(01)
: L55
-
L57
[20]
STUDY OF CHARGE TRAPPING AS A DEGRADATION MECHANISM IN ELECTRICALLY ALTERABLE READ-ONLY-MEMORIES
FALCONY, C
论文数:
0
引用数:
0
h-index:
0
FALCONY, C
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
DIMARIA, DJ
DONG, DW
论文数:
0
引用数:
0
h-index:
0
DONG, DW
DEMEYER, KM
论文数:
0
引用数:
0
h-index:
0
DEMEYER, KM
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(01)
: 43
-
47
←
1
2
3
4
5
6
→
共 51 条
[11]
CONDUCTION STUDIES IN SILICON-NITRIDE - DARK CURRENTS AND PHOTOCURRENTS
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DIMARIA, DJ
ARNETT, PC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ARNETT, PC
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1977,
21
(03)
: 227
-
244
[12]
CHARGE TRANSPORT AND TRAPPING PHENOMENA IN OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
DIMARIA, DJ
DONG, DW
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
DONG, DW
FALCONY, C
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
FALCONY, C
THEIS, TN
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
THEIS, TN
KIRTLEY, JR
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
KIRTLEY, JR
TSANG, JC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
TSANG, JC
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
YOUNG, DR
PESAVENTO, FL
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
PESAVENTO, FL
BRORSON, SD
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
BRORSON, SD
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(10)
: 5801
-
5827
[13]
HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
DIMARIA, DJ
DONG, DW
论文数:
0
引用数:
0
h-index:
0
DONG, DW
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(05)
: 2722
-
2735
[14]
EXTENDED CYCLABILITY IN ELECTRICALLY-ALTERABLE READ-ONLY-MEMORIES
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
DIMARIA, DJ
DONG, DW
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
DONG, DW
FALCONY, C
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
FALCONY, C
BRORSON, SR
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, CAMBRIDGE, MA 02139 USA
MIT, CAMBRIDGE, MA 02139 USA
BRORSON, SR
[J].
ELECTRON DEVICE LETTERS,
1982,
3
(07):
: 191
-
195
[15]
RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
DIMARIA, DJ
EPHRATH, LM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
EPHRATH, LM
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
YOUNG, DR
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(06)
: 4015
-
4021
[16]
DUAL-ELECTRON-INJECTOR-STRUCTURE ELECTRICALLY ALTERABLE READ-ONLY-MEMORY MODELING STUDIES
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
DIMARIA, DJ
DEMEYER, KM
论文数:
0
引用数:
0
h-index:
0
DEMEYER, KM
DONG, DW
论文数:
0
引用数:
0
h-index:
0
DONG, DW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(09)
: 1047
-
1053
[17]
DIMARIA DJ, 1980, PHYSICS MOS INSULATO, P1
[18]
PREPARATION AND SOME PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED SI-RICH SIO2 AND SI3N4 FILMS
DONG, D
论文数:
0
引用数:
0
h-index:
0
DONG, D
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
IRENE, EA
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
YOUNG, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(05)
: 819
-
823
[19]
THE PHASE-COMPOSITION OF SIOX FILMS
DVURECHENSKY, AV
论文数:
0
引用数:
0
h-index:
0
DVURECHENSKY, AV
EDELMAN, FL
论文数:
0
引用数:
0
h-index:
0
EDELMAN, FL
RYAZANTSEV, IA
论文数:
0
引用数:
0
h-index:
0
RYAZANTSEV, IA
[J].
THIN SOLID FILMS,
1982,
91
(01)
: L55
-
L57
[20]
STUDY OF CHARGE TRAPPING AS A DEGRADATION MECHANISM IN ELECTRICALLY ALTERABLE READ-ONLY-MEMORIES
FALCONY, C
论文数:
0
引用数:
0
h-index:
0
FALCONY, C
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
DIMARIA, DJ
DONG, DW
论文数:
0
引用数:
0
h-index:
0
DONG, DW
DEMEYER, KM
论文数:
0
引用数:
0
h-index:
0
DEMEYER, KM
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(01)
: 43
-
47
←
1
2
3
4
5
6
→