THE EFFECTS OF DOPING IMPURITIES AND SUBSTRATE CRYSTALLINITY ON THE FORMATION OF NICKEL SILICIDES ON SILICON AT 200-280-DEGREES-C

被引：1

作者：

CHEN, LJ

DOLAND, CM

WU, IW

CHIANG, A

TSAI, CC

CHU, JJ

LU, SW

NIEH, CW

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

[2] CALTECH,KECK LAB MAT SCI,PASADENA,CA 91125

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 01期

关键词：

D O I：

10.1007/BF02652237

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：75 / 81

页数：7

共 16 条

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[9] EPITAXIAL REGROWTH OF INTRINSIC, P-31-DOPED AND COMPENSATED (P-31+B-11 DOPED) AMORPHOUS SI [J].

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[10] EPITAXIAL-GROWTH OF NISI2 ON ION-IMPLANTED SILICON AT 250-280-DEGREES-C [J].

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