IMPERFECTIONS DUE TO DOUBLE DIFFUSIONS IN EPITAXIAL SILICON

被引：5

作者：

JUNGBLUT.ED

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来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 01期

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D O I：

10.1063/1.1708943

中图分类号：

O59 [应用物理学];

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页码：133 / &

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[1] X-RAY SURFACE TOPOGRAPHY OF DIFFUSION-GENERATED DISLOCATIONS IN SILICON (CONTRAST EXTINCTION BORON DIFFUSION E)
BLECH, IA
MEIERAN, ES
SELLO, H
[J]. APPLIED PHYSICS LETTERS, 1965, 7 (06) : 176 - &
[2] IMPERFECTIONS IN SILICON INDUCED BY DIFFUSION OF IMPURITIES
INO, H
KAWAMURA, T
YASUFUKU, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1964, 3 (11) : 692 - &
[3] INTERACTION OF DIFFUSION AND STACKING FAULTS IN SI EPITAXIAL MATERIAL
JACCODIN.RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2811 - &
[4] DIFFUSION-INDUCED DISLOCATION NETWORKS IN SI ( P + B DIFFUSION E/T )
JACCODINE, RJ
[J]. APPLIED PHYSICS LETTERS, 1964, 4 (06) : 114 - &
[5] DIFFUSION-INDUCED DEFECTS IN THIN SILICON FILMS (PRECIPITATION OF P DOPING METHOD ELECTRON TRASMISSION MICROSCOPY E)
JOSHI, ML
MASTERS, BJ
DASH, S
[J]. APPLIED PHYSICS LETTERS, 1965, 7 (11) : 306 - &
[6] EFFECT OF FAST COOLING ON DIFFUSION-INDUCED IMPERFECTIONS IN SILICON
JOSHI, ML
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (09) : 912 - &
[7] DIFFUSION-INDUCED IMPERFECTIONS IN SILICON
JOSHI, ML
WILHELM, F
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) : 185 - &
[8] PRECIPITATES OF PHOSPHORUS AND OF ARSENIC IN SILICON
JOSHI, ML
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (01) : 45 - &
[9] PROCESS-INTRODUCED STRUCTURAL DEFECTS AND JUNCTION CHARACTERISTICS IN NPN SILICON EPITAXIAL PLANAR TRANSISTORS
JUNGBLUT.ED
WANG, P
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) : 1967 - &
[10] JUNGBLUTH ED, 1965, PHYSICS FAILURES ELE