A NOVEL PROCESSING TECHNIQUE FOR THE FABRICATION OF THICK SILICON GRIDS BY ANISOTROPIC ETCHING

被引：8

作者：

PETIT, B ^{[1
]}

PELLETIER, J ^{[1
]}

MOLINS, R ^{[1
]}

机构：

[1] INST NATL POLYTECH GRENOBLE, CMTC, F-38402 ST MARTIN HERES, FRANCE

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 04期

关键词：

D O I：

10.1149/1.2114000

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：982 / 984

页数：3

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[9] THE FABRICATION AND USE OF SILICON AND GALLIUM-ARSENIDE ION-SOURCE EXTRACTION GRIDS [J].

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