ORDERING-INDUCED BAND-GAP REDUCTION IN INAS1-XSBX (X-APPROXIMATE-TO-0.4) ALLOYS AND SUPERLATTICES

被引：78

作者：

KURTZ, SR

DAWSON, LR

BIEFELD, RM

FOLLSTAEDT, DM

DOYLE, BL

机构：

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.46.1909

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ordering on the {111} planes of the group-V sublattice (CuPt type) is demonstrated in molecular-beam-epitaxy grown InAs1-xSbx (x almost-equal-to 0.4) alloys and strained-layer superlattices (SLS's) using transmission electron diffraction. Accompanying ordering, a significant reduction of the band gap of the alloy was observed through infrared photoluminescence and photoconductive response measurements. An ordered SLS displayed a photoresponse at longer wavelength than the ordered alloy, due to a type-II band offset of the ordered constituents of the SLS. The band-gap reduction caused by ordering in these samples indicates that InAs1-xSbx alloys can effectively span the 8-12-mu-m atmospheric window for long-wavelength, infrared-detector applications.

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页码：1909 / 1912

页数：4

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