MIGRATION OF SI IN MOLECULAR-BEAM EPITAXIAL-GROWTH OF DELTA-DOPED GAAS AND AL0.25GA0.75AS

被引：20

作者：

JANSEN, P

MEURIS, M

VANROSSUM, M

BORGHS, G

机构：

[1] IMEC Vzw, B-3030 Leuven

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 07期

关键词：

D O I：

10.1063/1.346299

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have analyzed the incorporation of Si δ doping during the molecular-beam epitaxial (MBE) growth of GaAs and Al0.25Ga 0.75As using secondary-ion mass spectroscopy. At high substrate temperatures (≥580 °C) a significant and asymmetric broadening is observed in both GaAs and Al0.25Ga0.75As. This is due to the combined effect of thermal diffusion and migration towards the surface during MBE growth. This study points out that a low substrate temperature (≤540 °C) and a short time are required during MBE crystal growth to achieve confined δ doping.

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页码：3766 / 3768

页数：3

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