EFFECTS OF TEMPERATURE ANNEALING ON CHARGE-INJECTION-INDUCED TRAPPING IN GATE OXIDES OF METAL-OXIDE-SILICON TRANSISTORS

被引：6

作者：

AVNI, E

SHAPPIR, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 05期

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D O I：

10.1063/1.339941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1563 / 1568

页数：6

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