LOW FIELD MOBILITY IN GAAS ION-IMPLANTED FETS

被引：23

作者：

LEE, K

SHUR, MS

LEE, K

VU, TT

ROBERTS, PCT

HELIX, MJ

机构：

[1] HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55413

[2] HONEYWELL INC,CTR CORP TECHNOL,BLOOMINGTON,MN 55420

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 03期

关键词：

D O I：

10.1109/T-ED.1984.21537

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：390 / 393

页数：4

共 13 条

[1] DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET [J].

FUKUI, H .

BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (03) :771-797

[2]

GIBBONS JF, 1975, SEMICONDUCTORS RELAT

[3]

HOWER PL, 1973, IEEE T ELECTRON DEVI, V20

[4] A DIAGNOSTIC PATTERN FOR GAAS-FET MATERIAL DEVELOPMENT AND PROCESS MONITORING [J].

IMMORLICA, AA ;

DECKER, DR ;

HILL, WA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (12) :2285-2291

[5] ON THE THEORY OF DEBYE AVERAGING IN THE C-V PROFILING OF SEMICONDUCTORS [J].

KROEMER, H ;

CHIEN, WY .

SOLID-STATE ELECTRONICS, 1981, 24 (07) :655-660

[6] DETERMINATION OF IMPURITY AND MOBILITY DISTRIBUTIONS IN EPITAXIAL SEMICONDUCTING-FILMS ON INSULATING SUBSTRATE BY C-V AND Q-V ANALYSIS [J].

LEHOVEC, K .

APPLIED PHYSICS LETTERS, 1974, 25 (05) :279-281

[7] SIMPLE METHOD OF MEASURING DRIFT-MOBILITY PROFILES IN THIN SEMICONDUCTOR-FILMS [J].

PUCEL, RA ;

KRUMM, CF .

ELECTRONICS LETTERS, 1976, 12 (10) :240-242

[8] LOW FIELD MOBILITY, EFFECTIVE SATURATION VELOCITY AND PERFORMANCE OF SUB-MICRON GAAS-MESFETS [J].

SHUR, MS .

ELECTRONICS LETTERS, 1982, 18 (21) :909-910

[9] MAGNETORESISTANCE MOBILITY PROFILING OF MESFET CHANNELS [J].

SITES, JR ;

WIEDER, HH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (12) :2277-2281

[10] AC PROFILING BY SCHOTTKY GATED CLOVERLEAF [J].

TANSLEY, TL .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1975, 8 (01) :52-54

← 1 2 →