ANISOTROPIC STRAIN RELAXATION IN BURIED COSI2 LAYERS FORMED BY MESOTAXY

被引：18

作者：

VANDENBERG, JM

WHITE, AE

HULL, R

SHORT, KT

YALISOVE, SM

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 02期

关键词：

D O I：

10.1063/1.345732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lattice mismatch in and out of the orientation direction was measured in layers of CoSi2 grown by high dose implantation and annealing. A comparison of (111), (100), and (110) orientations showed that the lateral mismatches were similar but the perpendicular mismatch increased monotonically through the series. The differences in the degree of relaxation of the three orientations provide a possible explanation for the observed anisotropy in the electrical properties.

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页码：787 / 791

页数：5

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