EFFICIENCY OF GAALAS HETEROSTRUCTURE RED LIGHT-EMITTING-DIODES

被引：17

作者：

NISHIZAWA, J ^{[1
]}

KOIKE, M ^{[1
]}

JIN, CC ^{[1
]}

机构：

[1] CHANGCHUN SECOND RADIO FACTORY,CHANGCHUN,PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.332312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2807 / 2812

页数：6

共 12 条

[1]

CASEY HC, HETEROSTRUCTURE LA A, P193

[2] HALL EFFECT AND RESISTIVITY OF ZN-DOPED GAAS [J].

ERMANIS, F ;

WOLFSTIR.K .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) :1963-&

[3] EFFICIENCY OF GASS1-XPX ELECTROLUMINESCENT DIODES [J].

MARUSKA, HP ;

PANKOVE, JI .

SOLID-STATE ELECTRONICS, 1967, 10 (09) :917-&

[4] PROPERTIES OF SN-DOPED GAAS [J].

NISHIZAW.J ;

SHINOZAK.S ;

ISHIDA, K .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) :1638-1645

[5] NEARLY PERFECT CRYSTAL-GROWTH OF III-V COMPOUNDS BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE [J].

NISHIZAWA, J ;

OKUNO, Y ;

TADANO, H .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :215-222

[6] MINORITY-CARRIER LIFETIME MEASUREMENTS OF EFFICIENT GAALAS P-N HETEROJUNCTIONS [J].

NISHIZAWA, J ;

SUTO, K ;

TESHIMA, T .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3484-3495

[7]

NISHIZAWA J, 1980, 2ND P INT SCH SEM OP

[8] LIQUID-PHASE EPITAXY OF GAP BY A TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE [J].

NISHIZAWA, JI ;

OKUNO, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (09) :716-721

[9] METHOD FOR DETERMINATION OF OPTIMUM P-N-JUNCTION DEPTH OF LUMINESCENCE DEVICES [J].

REICHL, H ;

MULLER, J .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) :4838-4842

[10]

SHINOZAKI S, 1971, IECE SSD7110 SEM SEM

← 1 2 →