STRONG LUMINESCENCE INTENSITIES IN AL0.22GA0.78AS GROWN ON MISORIENTED (111)B GAAS

被引：15

作者：

CHIN, A ^{[1
]}

CHENG, TM ^{[1
]}

PENG, SP ^{[1
]}

OSMAN, Z ^{[1
]}

DAS, U ^{[1
]}

CHANG, CY ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 17期

关键词：

D O I：

10.1063/1.110481

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strong enhancement in the luminescence intensity is observed in Al0.22Ga0.78As epitaxial layers grown on misoriented (111)B GaAs at 636-degrees-C. For 3-degrees misorientation, the luminescence intensity is almost 10 times that of (100) layers and the luminescence efficiency is an order of magnitude stronger than that of (100). (100) Al0.4Ga0.6As/GaAs quantum well laser diode structures grown under identical conditions with a low threshold current density of 150 A/cm2 are indications of excellent AlGaAs material quality. Electron mobility for 3-degrees misoriented (111) Al0.25Ga0.75As is about 10% higher than that for side-by-side grown (100). The strong luminescence associated with a large red shift of 90 meV, the 10% mobility enhancement, and wirelike structure shown in transmission electron microscopy are indicative of the natural formation of quantized structures.

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页码：2381 / 2383

页数：3

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