PHOTOCONDUCTIVITY IN DOPED MICROCRYSTALLINE SI-H,CL FILMS

被引:2
作者
AUGELLI, V [1 ]
LIGONZO, T [1 ]
MURRI, R [1 ]
SCHIAVULLI, L [1 ]
机构
[1] UNIV BARI,GRP NAZL STRUTTURA MAT,UNITA CENT INTERUNIV STRUTTURA MAT,I-70126 BARI,ITALY
关键词
D O I
10.1063/1.336943
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2863 / 2865
页数:3
相关论文
共 12 条
[1]   PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J].
ANDERSON, DA ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 36 (03) :695-712
[2]   EFFECTS OF THE DOPANTS ON THE ELECTRICAL-CONDUCTIVITY AND HALL-MOBILITY IN SI-H, CL FILMS [J].
AUGELLI, V ;
LIGONZO, T ;
MURRI, R ;
SCHIAVULLI, L .
THIN SOLID FILMS, 1985, 125 (1-2) :9-16
[3]   PHOTOCONDUCTIVITY IN AMORPHOUS SI-H-CL FILMS [J].
AUGELLI, V ;
MURRI, R ;
ALBA, N .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :248-251
[4]   OPTICAL-CONSTANTS OF SILICON FILMS DEPOSITED BY THE R.F. GLOW-DISCHARGE OF SICL4 [J].
AUGELLI, V ;
MURRI, R ;
SCHIAVULLI, L ;
BRUNO, G ;
CAPEZZUTO, P ;
CRAMAROSSA, F ;
EVANGELISTI, F ;
FORTUNATO, G .
THIN SOLID FILMS, 1981, 86 (04) :359-367
[5]   DARK CONDUCTIVITY IN AMORPHOUS UNDOPED SILICON FILMS [J].
AUGELLI, V ;
MURRI, R .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 57 (02) :225-240
[6]   RF PLASMA DEPOSITION OF AMORPHOUS-SILICON FILMS FROM SICL4-H2 [J].
BRUNO, G ;
CAPEZZUTO, P ;
CRAMAROSSA, F ;
DAGOSTINO, R .
THIN SOLID FILMS, 1980, 67 (01) :103-107
[7]  
BRUNO G, 1984, 1984 P EUR MAT RES S, P479
[8]  
CAPEZZUTO P, 1983, 6TH P INT S PLASM CH, P814
[9]   ELECTRICAL AND PHOTOCONDUCTIVE PROPERTIES OF ION-IMPLANTED AMORPHOUS-SILICON [J].
LECOMBER, PG ;
SPEAR, WE ;
MULLER, G ;
KALBITZER, S .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :327-332
[10]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SI-F-H ALLOYS [J].
MADAN, A ;
OVSHINSKY, SR ;
BENN, E .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 40 (04) :259-277