EFFECTS OF THE DOPANTS ON THE ELECTRICAL-CONDUCTIVITY AND HALL-MOBILITY IN SI-H, CL FILMS

被引：8

作者：

AUGELLI, V ^{[1
]}

LIGONZO, T ^{[1
]}

MURRI, R ^{[1
]}

SCHIAVULLI, L ^{[1
]}

机构：

[1] CTR INTERUNIV STRUTTURA MAT,UNITA GRP NAZL STRUTTURA MAT,I-70126 BARI,ITALY

来源：

THIN SOLID FILMS | 1985年 / 125卷 / 1-2期

关键词：

ELECTRIC CONDUCTIVITY - HALL EFFECT;

D O I：

10.1016/0040-6090(85)90388-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical conductivity was measured as a function of the temperature in films of hydrogenated and chlorinated silicon. Phosphine and diborane were added to the gas phase in well-controlled percentages. Differences in the behavior of the activation energy of the conductivity are found according to the deposition conditions of the films. The Hall mobility varies with the doping and with the crystallite size, which in turn depends on the deposition rate.

引用

页码：9 / 16

页数：8

共 24 条

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