共 25 条
[11]
NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX .2. MODEL CALCULATION OF ELECTRONIC STATES N-GAMMA AND NX AT LOW-TEMPERATURE
[J].
PHYSICAL REVIEW B,
1977, 16 (04)
:1597-1615
[15]
ELECTRONIC-ENERGY LEVELS OF SUBSTITUTIONAL DEFECT PAIRS IN SI
[J].
PHYSICAL REVIEW B,
1982, 26 (06)
:3243-3248
[17]
SANKEY OF, UNPUB
[18]
AUGER DEPTH PROFILING STUDIES OF INTERDIFFUSION AND CHEMICAL TRAPPING AT METAL-INP INTERFACES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1983, 1 (03)
:618-622
[19]
NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1979, 16 (05)
:1422-1433
[20]
UNIFIED DEFECT MODEL AND BEYOND
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1980, 17 (05)
:1019-1027