INTERFACIAL DEEP LEVELS RESPONSIBLE FOR SCHOTTKY-BARRIER FORMATION AT SEMICONDUCTOR METAL CONTACTS

被引:8
作者
DOW, JD
SANKEY, OF
ALLEN, RE
机构
[1] ARIZONA STATE UNIV, DEPT PHYS, TEMPE, AZ 85287 USA
[2] TEXAS A&M UNIV, DEPT PHYS, COLLEGE STN, TX 77843 USA
来源
APPLICATIONS OF SURFACE SCIENCE | 1985年 / 22-3卷 / MAY期
关键词
D O I
10.1016/0378-5963(85)90227-2
中图分类号
学科分类号
摘要
引用
收藏
页码:937 / 947
页数:11
相关论文
共 25 条
[11]   NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX .2. MODEL CALCULATION OF ELECTRONIC STATES N-GAMMA AND NX AT LOW-TEMPERATURE [J].
HSU, WY ;
DOW, JD ;
WOLFORD, DJ ;
STREETMAN, BG .
PHYSICAL REVIEW B, 1977, 16 (04) :1597-1615
[12]   STUDY OF NEUTRAL VACANCY IN SEMI-CONDUCTORS [J].
LANNOO, M ;
LENGLART, P .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (10) :2409-&
[13]   CHEMISORPTION-INDUCED DEFECTS AT INTERFACES ON COMPOUND SEMICONDUCTORS [J].
MONCH, W .
SURFACE SCIENCE, 1983, 132 (1-3) :92-121
[14]   SI-TRANSITION-METAL SCHOTTKY BARRIERS - FERMI-LEVEL PINNING BY SI DANGLING BONDS AT INTERFACIAL VACANCIES [J].
SANKEY, OF ;
ALLEN, RE ;
DOW, JD .
SOLID STATE COMMUNICATIONS, 1984, 49 (01) :1-5
[15]   ELECTRONIC-ENERGY LEVELS OF SUBSTITUTIONAL DEFECT PAIRS IN SI [J].
SANKEY, OF ;
DOW, JD .
PHYSICAL REVIEW B, 1982, 26 (06) :3243-3248
[16]   THEORY OF TETRAHEDRAL-SITE INTERSTITIAL S-BONDED AND P-BONDED IMPURITIES IN SI [J].
SANKEY, OF ;
DOW, JD .
PHYSICAL REVIEW B, 1983, 27 (12) :7641-7653
[17]  
SANKEY OF, UNPUB
[18]   AUGER DEPTH PROFILING STUDIES OF INTERDIFFUSION AND CHEMICAL TRAPPING AT METAL-INP INTERFACES [J].
SHAPIRA, Y ;
BRILLSON, LJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :618-622
[19]   NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION [J].
SPICER, WE ;
CHYE, PW ;
SKEATH, PR ;
SU, CY ;
LINDAU, I .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1422-1433
[20]   UNIFIED DEFECT MODEL AND BEYOND [J].
SPICER, WE ;
LINDAU, I ;
SKEATH, P ;
SU, CY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1019-1027