ACTIVATION OF SHALLOW, HIGH-DOSE BF2+ IMPLANTS INTO SILICON BY RAPID THERMAL-PROCESSING

被引：15

作者：

POWELL, RA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 10期

关键词：

D O I：

10.1063/1.333818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2837 / 2843

页数：7

共 33 条

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[16]

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APPLIED PHYSICS LETTERS, 1983, 43 (10) :957-959

[18] FORMATION OF TITANIUM SILICIDE FILMS BY RAPID THERMAL-PROCESSING [J].

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[19] RANGE PARAMETERS OF BORON IMPLANTED INTO SILICON [J].

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APPLIED PHYSICS, 1981, 24 (01) :39-43

[20] HIGH-CONCENTRATION EFFECTS OF ION-IMPLANTED BORON IN SILICON [J].

RYSSEL, H ;

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APPLIED PHYSICS, 1980, 22 (01) :35-38

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