AN ANISOTYPE GAAS INXGA1-XAS HETEROJUNCTION FIELD-EFFECT TRANSISTOR FOR DIGITAL LOGIC APPLICATIONS

被引：5

作者：

LIN, CL

FERNANDEZ, JM

WIEDER, HH

机构：

[1] Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 01期

关键词：

D O I：

10.1109/55.46921

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An anisotype heterojunction field-effect transistor (AHJFET) is proposed for GaAs digital integrated circuit applications. A thin, highly doped, strained InxGa1−xAs (x ≤ 0.2) n-channel is employed for improved transconductance while a p+-GaAs cap is used to enhance the dynamic gate voltage range of the device. Prototype devices with 5-μm gate lengths show maximum transconductance of 80 mS/mm at Vds = 2 V and forward gate bias voltage of up to +2 V without significant leakage current. © 1990 IEEE

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页码：30 / 32

页数：3

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