TEMPERATURE TRANSIENTS IN IMPATT DIODES

[11] THERMAL-ANALYSIS OF MULTIPLE-LAYER STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (11) : 674 - 681

[12] THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 161 - &

[13] HIGH-TEMPERATURE STABILITY OF AU PT-N-GAAS SCHOTTKY-BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1974, 17 (08) : 869 - 876

[14] JUNCTION TEMPERATURES UNDER BREAKDOWN CONDITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (07) : 917 - +

[15] THERMAL RUNAWAY OF IMPATT DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (04) : 165 - 168

[16] MECHANISM FOR CATASTROPHIC FAILURE OF AVALANCHE-DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (10) : 842 - 849

[17] Paschkis V., 1942, T AM SOC MECH ENG, V64, P105

[18] SEPTIER A, 1967, FOCUSING CHARGED PAR, V1

[19] THERMAL CONDUCTIVITY OF SILICON FROM 300 TO 1400 DEGREES K [J]. PHYSICAL REVIEW, 1963, 130 (05): : 1743 - &

[20] EFFECT OF ALLOYING BEHAVIOR ON ELECTRICAL CHARACTERISTICS OF N-GAAS SCHOTTKY DIODES METALLIZED WITH W, AU, AND PT [J]. APPLIED PHYSICS LETTERS, 1973, 23 (12) : 666 - 668

[11] THERMAL-ANALYSIS OF MULTIPLE-LAYER STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (11) : 674 - 681

[12] THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 161 - &

[13] HIGH-TEMPERATURE STABILITY OF AU PT-N-GAAS SCHOTTKY-BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1974, 17 (08) : 869 - 876

[14] JUNCTION TEMPERATURES UNDER BREAKDOWN CONDITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (07) : 917 - +

[15] THERMAL RUNAWAY OF IMPATT DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (04) : 165 - 168

[16] MECHANISM FOR CATASTROPHIC FAILURE OF AVALANCHE-DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (10) : 842 - 849

[17] Paschkis V., 1942, T AM SOC MECH ENG, V64, P105

[18] SEPTIER A, 1967, FOCUSING CHARGED PAR, V1

[19] THERMAL CONDUCTIVITY OF SILICON FROM 300 TO 1400 DEGREES K [J]. PHYSICAL REVIEW, 1963, 130 (05): : 1743 - &

[20] EFFECT OF ALLOYING BEHAVIOR ON ELECTRICAL CHARACTERISTICS OF N-GAAS SCHOTTKY DIODES METALLIZED WITH W, AU, AND PT [J]. APPLIED PHYSICS LETTERS, 1973, 23 (12) : 666 - 668