A FLOATING-GATE TRANSMISSION-LINE MODEL TECHNIQUE FOR MEASURING SOURCE RESISTANCE IN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS

被引：6

作者：

DELALAMO, JA ^{[1
]}

AZZAM, WJ ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 11期

关键词：

D O I：

10.1109/16.43658

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2386 / 2393

页数：8

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