FET CHARACTERIZATION USING GATED-TLM STRUCTURE

被引：28

作者：

BAIER, SM ^{[1
]}

SHUR, MS ^{[1
]}

LEE, K ^{[1
]}

CIRILLO, NC ^{[1
]}

HANKA, SA ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 12期

关键词：

D O I：

10.1109/T-ED.1985.22422

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2824 / 2829

页数：6

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