IMPURITY EFFECTS IN MOLYBDENUM SILICIDE FORMATION

被引：28

作者：

NAVA, F

MAJNI, G

CANTONI, P

PIGNATEL, G

FERLA, G

CAPPELLETTI, P

MORI, F

机构：

[1] IST NAZL FIS NUCL,BOLOGNA,ITALY

[2] SGS,MILANO,ITALY

来源：

THIN SOLID FILMS | 1982年 / 94卷 / 01期

关键词：

D O I：

10.1016/0040-6090(82)90030-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：59 / 65

页数：7

共 19 条

[11]

LUSTMAN B, 1950, METAL PROGR, V57, P629

[12] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J].

MOCHIZUKI, T ;

SHIBATA, K ;

INOUE, T ;

OHUCHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 :37-42

[13] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J].

MURARKA, SP ;

FRASER, DB ;

SINHA, AK ;

LEVINSTEIN, HJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1409-1417

[14] THE OXYGEN EFFECT IN THE GROWTH-KINETICS OF PLATINUM SILICIDES [J].

NAVA, F ;

VALERI, S ;

MAJNI, G ;

CEMBALI, A ;

PIGNATEL, G ;

QUEIROLO, G .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6641-6646

[15] SILICIDE FORMATION IN THIN MOLYBDENUM AND TUNGSTEN FILMS ON SINGLE-CRYSTAL SILICON SUBSTRATES AT RELATIVELY LOW-TEMPERATURES [J].

OERTEL, B ;

SPERLING, R .

THIN SOLID FILMS, 1976, 37 (02) :185-194

[16] REACTION OF THIN METAL-FILMS WITH SIO2 SUBSTRATES [J].

PRETORIUS, R ;

HARRIS, JM ;

NICOLET, MA .

SOLID-STATE ELECTRONICS, 1978, 21 (04) :667-&

[17] APPLICATION OF MOSI2 TO THE DOUBLE-LEVEL INTERCONNECTIONS OF I2L CIRCUITS [J].

SASAKI, Y ;

OZAWA, O ;

KAMEYAMA, S .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) :450-454

[18] THIN-FILM MO-SI INTERACTION [J].

SCHUTZ, RJ ;

TESTARDI, LR .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :797-798

[19] REACTION OF MO THIN-FILMS ON SI (100) SURFACES [J].

YANAGISAWA, S ;

FUKUYAMA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (05) :1150-1156

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