ANTIPARALLEL CRYSTAL ORIENTATION IN COSI2 EPITAXIAL BILAYERS FORMED BY ION-IMPLANTATION

被引：24

作者：

WU, MF

VANTOMME, A

LANGOUCHE, G

MAEX, K

VANDERSTRAETEN, H

BRUYNSERAEDE, Y

机构：

[1] INTERUNIV LEUVEN,CTR MICROELECTR,B-3001 LOUVAIN,BELGIUM

[2] KATHOLIEKE UNIV LEUVEN,VASTE STOFFYS MAGNETISME LAB,B-3001 LOUVAIN,BELGIUM

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 19期

关键词：

D O I：

10.1063/1.104148

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Orientation and strain in buried CoSi2 layers have been studied in a Si/CoSi2/Si/CoSi2/Si(111) structure. Using a well defined implantation and annealing procedure, a unique combination of CoSi 2 epitaxial layers was obtained having the same strain but an opposite orientation. These novel structures are interesting for epitaxial growth studies and may have important device applications.

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页码：1973 / 1975

页数：3

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