INTERFACE STATES AT THE SIO2-SI INTERFACE

[1] 1 MU-M MOSFET VLSI TECHNOLOGY .8. RADIATION EFFECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 372 - 379

[2] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3386 - 3391

[3] MEASUREMENTS OF INTERFACE STATE DENSITY IN MNOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 333 - 335

[4] CRYSTALLOGRAPHIC SYMMETRY OF SURFACE STATE DENSITY IN THERMALLY OXIDIZED SILICON [J]. APPLIED PHYSICS LETTERS, 1968, 13 (12) : 413 - +

[5] SIMPLE MICROCOMPUTER-BASED APPARATUS FOR COMBINED DLTS C-V MEASUREMENT [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1982, 53 (07) : 1001 - 1006

[6] SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) : 1359 - 1365

[7] BALK P, 1980, 8TH P INT VAC C CANN

[8] BALK P, 1965, ELECTROCHEM SOC M

[9] BALK P, 1983, SISIO2 SYSTEM

[10] GE PHOTOCAPACITIVE MIS INFRARED DETECTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 7883 - 7886

[1] 1 MU-M MOSFET VLSI TECHNOLOGY .8. RADIATION EFFECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 372 - 379

[2] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3386 - 3391

[3] MEASUREMENTS OF INTERFACE STATE DENSITY IN MNOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 333 - 335

[4] CRYSTALLOGRAPHIC SYMMETRY OF SURFACE STATE DENSITY IN THERMALLY OXIDIZED SILICON [J]. APPLIED PHYSICS LETTERS, 1968, 13 (12) : 413 - +

[5] SIMPLE MICROCOMPUTER-BASED APPARATUS FOR COMBINED DLTS C-V MEASUREMENT [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1982, 53 (07) : 1001 - 1006

[6] SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) : 1359 - 1365

[7] BALK P, 1980, 8TH P INT VAC C CANN

[8] BALK P, 1965, ELECTROCHEM SOC M

[9] BALK P, 1983, SISIO2 SYSTEM

[10] GE PHOTOCAPACITIVE MIS INFRARED DETECTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 7883 - 7886