LINEARITY OF PMOS RADIATION DOSIMETERS OPERATED AT ZERO BIAS

被引：14

作者：

HOLMESSIEDLE, A ^{[1
]}

ADAMS, L ^{[1
]}

PAULY, B ^{[1
]}

MARSDEN, S ^{[1
]}

机构：

[1] EUROPEAN SPACE RES & TECHNOL CTR,2200 AG NOORDWIJK,NETHERLANDS

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 13期

关键词：

D O I：

10.1049/el:19850403

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：570 / 571

页数：2

共 8 条

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[2] ADVANTAGES OF USING A PMOS FET DOSIMETER IN HIGH-DOSE RADIATION EFFECTS TESTING [J].

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[3] SIMPLE-MODEL FOR PREDICTING RADIATION EFFECTS IN MOS DEVICES [J].

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[4]

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[5] SPACE-CHARGE DOSIMETER - GENERAL PRINCIPLES OF A NEW METHOD OF RADIATION DETECTION [J].

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[6] DOSIMETRIC SILICA FILMS - THE INFLUENCE OF FIELDS ON THE CAPTURE OF POSITIVE CHARGE [J].

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ADAMS, L .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1975-1979

[7] THE MECHANISMS OF SMALL INSTABILITIES IN IRRADIATED MOS-TRANSISTORS [J].

HOLMESSIEDLE, A ;

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4135-4140

[8]

HUGHES RC, J APPL PHYS

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