BIAS EFFECTS ON PREPARATION OF AMORPHOUS-SILICON IN A TRIODE GLOW-DISCHARGE

被引:3
作者
AOZASA, M
PYON, RG
ANDO, K
机构
[1] Osaka City Univ, Osaka, Jpn, Osaka City Univ, Osaka, Jpn
关键词
D O I
10.1016/0040-6090(86)90285-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
23
引用
收藏
页码:263 / 274
页数:12
相关论文
共 26 条
[1]   BIAS EFFECTS ON THE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FILM IN A GLOW-DISCHARGE [J].
ANDO, K ;
AOZASA, M ;
PYON, RG .
APPLIED PHYSICS LETTERS, 1984, 44 (04) :413-415
[2]  
AOZASA M, 1984, 8TH P S ION SOURC IO, P247
[3]  
BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[4]   QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON [J].
BRODSKY, MH ;
FRISCH, MA ;
ZIEGLER, JF ;
LANFORD, WA .
APPLIED PHYSICS LETTERS, 1977, 30 (11) :561-563
[5]   PLASMA SHEATH FORMATION BY RADIO-FREQUENCY FIELDS [J].
BUTLER, HS ;
KINO, GS .
PHYSICS OF FLUIDS, 1963, 6 (09) :1346-1355
[6]   GROWTH OF HYDROGENATED AMORPHOUS-SILICON DUE TO CONTROLLED ION-BOMBARDMENT FROM A PURE SILANE PLASMA [J].
DREVILLON, B ;
PERRIN, J ;
SIEFERT, JM ;
HUC, J ;
LLORET, A ;
DEROSNY, G ;
SCHMITT, JPM .
APPLIED PHYSICS LETTERS, 1983, 42 (09) :801-803
[7]   SILANE DISSOCIATION MECHANISMS AND THIN-FILM FORMATION IN A LOW-PRESSURE MULTIPOLE DC DISCHARGE [J].
DREVILLON, B ;
HUC, J ;
LLORET, A ;
PERRIN, J ;
DEROSNY, G ;
SCHMITT, JPM .
APPLIED PHYSICS LETTERS, 1980, 37 (07) :646-648
[8]   CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J].
FRITZSCHE, H .
SOLAR ENERGY MATERIALS, 1980, 3 (04) :447-501
[9]   GROWTH-KINETICS OF AMORPHOUS HYDROGENATED SILICON STUDIED BY PULSED RF DISCHARGE [J].
HAMASAKI, T ;
UEDA, M ;
HIROSE, M ;
OSAKA, Y .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :679-682
[10]   HYDROGEN ELIMINATION DURING THE GLOW-DISCHARGE DEPOSITION OF A-SI-H ALLOYS [J].
KAMPAS, FJ ;
GRIFFITH, RW .
APPLIED PHYSICS LETTERS, 1981, 39 (05) :407-409