DETERMINATION OF STRESSES IN SI-SIO2 AND MECHANICALLY AFFECTED SI BY ELECTRON-PARAMAGNETIC-RES

被引:3
作者
GEHLHOFF, W
SEGSA, KH
机构
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1983年 / 118卷 / 02期
关键词
D O I
10.1002/pssb.2221180227
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:703 / 712
页数:10
相关论文
共 32 条
[2]  
Bendik N. T., 1971, Fizika i Tekhnika Poluprovodnikov, V5, P848
[3]   ESR IN IRON DOPED SILICON-CRYSTALS UNDER STRESS [J].
BERKE, M ;
WEBER, E ;
ALEXANDER, H ;
LUFT, H ;
ELSCHNER, B .
SOLID STATE COMMUNICATIONS, 1976, 20 (09) :881-884
[4]   HIGH-PURITY THERMAL-TREATMENT OF SILICON [J].
BORCHARDT, G ;
WEBER, E ;
WIEHL, N .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1603-1604
[5]   SURFACE CHARGE AND STRESS IN SI-SIO2 SYSTEM [J].
BROTHERTON, SD ;
READ, TG ;
LAMB, DR ;
WILLOUGHBY, AF .
SOLID-STATE ELECTRONICS, 1973, 16 (12) :1367-1375
[6]   X-RAY MEASUREMENT OF ELASTIC STRAIN AND ANNEALING IN SEMICONDUCTORS [J].
COHEN, BG ;
FOCHT, MW .
SOLID-STATE ELECTRONICS, 1970, 13 (02) :105-&
[7]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[8]   STRESS IN THERMAL SIO2 DURING GROWTH [J].
EERNISSE, FP .
APPLIED PHYSICS LETTERS, 1979, 35 (01) :8-10
[9]   GENERATION OF DISLOCATIONS ON POLISHED SURFACES OF DISLOCATION FREE SILICON-WAFERS [J].
FISCHER, W ;
HEYMANN, G .
KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1980, 15 (04) :463-469
[10]   HIGH-TEMPERATURE REAL-TIME STUDIES OF LATTICE STRAINS INDUCED BY LOCALIZED OXIDATION OF SILICON [J].
FRANZ, G ;
HARTMANN, W .
APPLIED PHYSICS, 1980, 23 (01) :107-112