FABRICATION AND RESIST EXPOSURE CHARACTERISTICS OF 50 KEV NANOMETER E-BEAM LITHOGRAPHY SYSTEM

被引：18

作者：

GAMO, K ^{[1
]}

YAMASHITA, K ^{[1
]}

EMOTO, F ^{[1
]}

NAMBA, S ^{[1
]}

SAMOTO, N ^{[1
]}

SHIMIZU, R ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN,SUITA,OSAKA 565,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.583191

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：117 / 120

页数：4

共 10 条

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[7] HIGH-VOLTAGE ELECTRON LITHOGRAPHY
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[8] PERFORMANCE RESULTS OF AN ELECTRON-BEAM LITHOGRAPHY MACHINE AND PROCESS BY MEANS OF DC ELECTRICAL TEST STRUCTURES
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[9] EXPOSURE AND DEVELOPMENT SIMULATIONS FOR NANOMETER ELECTRON-BEAM LITHOGRAPHY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1367 - 1371
[10] A FIELD-EMISSION E-BEAM SYSTEM FOR NANOMETER LITHOGRAPHY
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