MOLECULAR-BEAM EPITAXY GROWTH AND APPLICATIONS OF EPITAXIAL FLUORIDE FILMS

[11] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 415 - 420

[12] FARROW RFC, 1985, MATER RES SOC S P, V37, P181

[13] ELECTRON-MICROSCOPY OF EPITAXIAL SI/CAF2/SI STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 736 - 738

[14] SURFACE-MORPHOLOGY OF EPITAXIAL CAF2 FILMS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (05) : 519 - 521

[15] FATHAUER RW, UNPUB P MATERIALS RE

[16] FATHAUER RW, 1985, 1ST P INT S SI MBE, P277

[17] DIRECT MEASUREMENTS OF THE SURFACE ENERGIES OF CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) : 2208 - 2218

[18] SURFACE-ROUGHNESS SCATTERING AT THE SI-SIO2 INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 803 - 808

[19] STRAIN-MEASUREMENT OF EPITAXIAL CAF2 ON SI(111) BY MEV ION CHANNELING [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1071 - 1073

[20] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI [J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 66 - 68

[11] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 415 - 420

[12] FARROW RFC, 1985, MATER RES SOC S P, V37, P181

[13] ELECTRON-MICROSCOPY OF EPITAXIAL SI/CAF2/SI STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 736 - 738

[14] SURFACE-MORPHOLOGY OF EPITAXIAL CAF2 FILMS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (05) : 519 - 521

[15] FATHAUER RW, UNPUB P MATERIALS RE

[16] FATHAUER RW, 1985, 1ST P INT S SI MBE, P277

[17] DIRECT MEASUREMENTS OF THE SURFACE ENERGIES OF CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) : 2208 - 2218

[18] SURFACE-ROUGHNESS SCATTERING AT THE SI-SIO2 INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 803 - 808

[19] STRAIN-MEASUREMENT OF EPITAXIAL CAF2 ON SI(111) BY MEV ION CHANNELING [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1071 - 1073

[20] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI [J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 66 - 68