HIGH-RESOLUTION MEASUREMENTS OF LOCALIZED VIBRATIONAL-MODE INFRARED-ABSORPTION OF SI-DOPED GAAS

被引：60

作者：

THEIS, WM

SPITZER, WG

机构：

[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089

[2] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 04期

关键词：

D O I：

10.1063/1.334064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：890 / 898

页数：9

共 18 条

[1] OPTICAL STUDIES OF VIBRATIONAL PROPERTIES OF DISORDERED SOLIDS [J].

BARKER, AS ;

SIEVERS, AJ .

REVIEWS OF MODERN PHYSICS, 1975, 47 :S1-S179

[2] SILICON DONOR-ACCEPTOR PAIR DEFECTS IN GALLIUM-ARSENIDE [J].

BROZEL, MR ;

NEWMAN, RC ;

OZBAY, B .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (20) :L785-L788

[3] LOW-SYMMETRY INTERSTITIAL BORON CENTER IN IRRADIATED GALLIUM-ARSENIDE [J].

BROZEL, MR ;

NEWMAN, RC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (15) :3135-3146

[4] INFRARED-ABSORPTION BANDS INDUCED BY SI-RELATED DEFECTS IN GAAS - ABSORPTION CROSS-SECTIONS [J].

CHEN, RT ;

RANA, V ;

SPITZER, WG .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1532-1538

[5] SI-DEFECT CONCENTRATIONS IN HEAVILY SI-DOPED GAAS - ANNEALING-INDUCED CHANGES-II [J].

CHEN, RT ;

SPITZER, WG .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (06) :1085-1129

[6] INFRARED-ABSORPTION AND MICROSTRUCTURE OF LI-SATURATED SI-DOPED GAAS [J].

CHEN, RT ;

SPITZER, WG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1607-1617

[7]

HAYES W, 1965, PHYS REV, V138, P1227

[8] CLUSTER-BETHE-LATTICE TREATMENT OF THE SILICON PAIR DEFECT IN GALLIUM-ARSENIDE [J].

KLEINERT, P .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 117 (02) :K91-K94

[9] STRENGTH OF INFRARED-ABSORPTION FROM SILICON DONORS AND SILICON ACCEPTORS IN GALLIUM-ARSENIDE [J].

LAITHWAITE, K ;

NEWMAN, RC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (24) :4503-4510

[10] DETECTION OF STRAIN IN NEUTRON-IRRADIATED GALLIUM-ARSENIDE FROM LOCAL MODE ABSORPTION-MEASUREMENTS [J].

LAITHWAITE, K ;

NEWMAN, RC .

PHILOSOPHICAL MAGAZINE, 1977, 35 (06) :1689-1695

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