ABSORPTION OF INFRARED RADIATION IN SILICON

被引:34
作者
BOYD, IW [1 ]
BINNIE, TD [1 ]
WILSON, JIB [1 ]
COLLES, MJ [1 ]
机构
[1] HERIOT WATT UNIV,DEPT PHYS,EDINBURGH EH14 4AS,MIDLOTHIAN,SCOTLAND
关键词
D O I
10.1063/1.333300
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3061 / 3063
页数:3
相关论文
共 12 条
[1]   DUAL-WAVELENGTH LASER ANNEALING [J].
AUSTON, DH ;
VENKATESAN, TNC ;
GOLOVCHENKO, JA .
APPLIED PHYSICS LETTERS, 1979, 34 (09) :558-560
[2]   THEORETICAL CONSIDERATIONS REGARDING PULSED CO2-LASER ANNEALING OF SILICON [J].
BHATTACHARYYA, A ;
STREETMAN, BG .
SOLID STATE COMMUNICATIONS, 1980, 36 (08) :671-675
[3]   SUBSTRATE HEATING EFFECTS IN CO2-LASER ANNEALING OF ION-IMPLANTED SILICON [J].
BLOMBERG, M ;
NAUKKARINEN, K ;
TUOMI, T ;
AIRAKSINEN, VM ;
LUOMAJARVI, M ;
RAUHALA, E .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2327-2328
[4]   A STUDY OF THIN SILICON DIOXIDE FILMS USING INFRARED-ABSORPTION TECHNIQUES [J].
BOYD, IW ;
WILSON, JIB .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4166-4172
[5]   OXIDATION OF SILICON SURFACES BY CO2-LASERS [J].
BOYD, IW ;
WILSON, JIB .
APPLIED PHYSICS LETTERS, 1982, 41 (02) :162-164
[6]   A REVIEW OF LASER-BEAM APPLICATIONS FOR PROCESSING SILICON [J].
BOYD, IW .
CONTEMPORARY PHYSICS, 1983, 24 (05) :461-490
[7]   QUANTITATIVE-DETERMINATION OF THE CARRIER CONCENTRATION DISTRIBUTION IN SEMICONDUCTORS BY SCANNING IR ABSORPTION - SI [J].
JASTRZEBSKI, L ;
LAGOWSKI, J ;
GATOS, HC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) :260-263
[8]   LATTICE ABSORPTION BANDS IN SILICON [J].
JOHNSON, FA .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (470) :265-272
[9]   TEMPERATURE-DEPENDENCE OF THE REFLECTANCE OF SOLID AND LIQUID SILICON [J].
LAMPERT, MO ;
KOEBEL, JM ;
SIFFERT, P .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :4975-4976
[10]  
PAUL W, 1963, PROGRESS SEMICONDUCT, V7, P135