THE GADOLINIUM-SI(100)2X1 INTERFACE

被引：14

作者：

HENLE, WA

RAMSEY, MG

NETZER, FP

WITZEL, S

BRAUN, W

机构：

[1] UNIV OSNABRUCK,FACHBEREICH PHYS,W-4500 OSNABRUCK,GERMANY

[2] BESSY GMBH,W-1000 BERLIN 33,GERMANY

来源：

SURFACE SCIENCE | 1991年 / 243卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(91)90353-T

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The formation of the Gd-Si(100)2 x 1 interface and its temperature evolution has been investigated by valence band and core level photoemission using synchrotron radiation, Auger electron spectroscopy and LEED. Compared to Si(111)7 x 7 the reactivity of Gd on the Si(100)2 x 1 substrate is enhanced and a greater tendency for intermixing of Gd and Si is observed. As on Si(111) a multiphase interface is formed. The phase diagram of Gd on Si(100) shows ordered LEED structures at elevated temperature suggesting the formation of epitaxial silicide phases; order and stability of these phases on Si(100) are less well pronounced than those of the corresponding silicides on Si(111). The Auger results suggest a somewhat different disilicide stoichiometry on Si(100) as compared to Si(111).

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页码：141 / 150

页数：10

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