TYPE CONVERSION NEAR THE P-SI SUBSTRATE SURFACE BY GROWING GAAS ON SI SUBSTRATES

被引：3

作者：

NISHIOKA, T ^{[1
]}

ITOH, Y ^{[1
]}

YAMAMOTO, A ^{[1
]}

YAMAGICHI, M ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, IBARAKI ELECT COMMUN LABS, TOKAI, IBARAKI 31911, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.341844

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1266 / 1270

页数：5

共 16 条

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD
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[2] GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES
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[3] LOW-THRESHOLD HIGH-EFFICIENCY ALGAAS-GAAS DOUBLE-HETEROSTRUCTURE INJECTION-LASERS GROWN ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (07) : 407 - 409
[4] TIGHT-BINDING THEORY OF HETEROJUNCTION BAND LINEUPS AND INTERFACE DIPOLES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1068 - 1073
[5] POLAR HETEROJUNCTION INTERFACES
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[J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4402 - 4410
[6] 14.5-PERCENT CONVERSION EFFICIENCY GAAS SOLAR-CELL FABRICATED ON SI SUBSTRATES
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YAMAMOTO, A
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[J]. APPLIED PHYSICS LETTERS, 1986, 49 (23) : 1614 - 1616
[7] CONTINUOUS (300 K) PHOTOPUMPED LASER OPERATION OF ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN ON STRAINED-LAYER GAAS ON SI
KALISKI, RW
HOLONYAK, N
HSIEH, KC
NAM, DW
LEE, JW
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EPLER, JE
CHUNG, HF
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (13) : 836 - 838
[8] POLAR-ON-NONPOLAR EPITAXY
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[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 193 - 204
[9] NISHIOKA T, UNPUB
[10] ALGAAS/GAAS DH-LASERS ON SI SUBSTRATES GROWN USING SUPER LATTICE BUFFER LAYERS BY MOCVD
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SOGA, T
TAKEYASU, M
UMENO, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08): : L666 - L668

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