SELECTIVE SILICON EPITAXY BY PHOTOCHEMICAL VAPOR-DEPOSITION AT A VERY-LOW TEMPERATURE OF 160-DEGREES-C

被引：10

作者：

YAMADA, A

OSHIMA, T

KONAGAI, M

TAKAHASHI, K

机构：

[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, 152, O-okayama 2-12-1, Meguro ku

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 10期

关键词：

HEAVILY DOPED SILICON; PHOTOCHEMICAL VAPOR DEPOSITION (CVD); SELECTIVE SILICON EPITAXY;

D O I：

10.1007/BF02655470

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have grown epitaxial Si films by the photo-chemical vapor deposition (photo-CVD) technique with SiH4 and H-2 at a very low-temperature of 160 degrees C. Epitaxial films were grown on silicon substrates, while amorphous-like films were deposited on glass substrates. Furthermore, it was found fi om the atomic hydrogen etching which was produced by photo-dissociation of hydrogen that the etching rate cif amorphous silicon was much higher than that of crystal silicon. By using these selectively, we have demonstrated selective epitaxial growth of silicon by the photo-CVD technique followed by the atomic hydrogen photo-etching. Furthermore, heavily phosphorus-doped silicon films (>1 x 10(21) cm(-3)) were also selectively grown by this novel technique.

引用

页码：1511 / 1515

页数：5

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