LOW-TEMPERATURE FORMATION OF SI/SILICIDE/SI DOUBLE HETEROSTRUCTURES BY SELF-ALIGNED MBE GROWTH

被引：11

作者：

OHSIMA, T

NAKAMURA, N

NAKAGAWA, K

MIYAO, M

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo

来源：

THIN SOLID FILMS | 1990年 / 184卷

关键词：

D O I：

10.1016/0040-6090(90)90423-B

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

New formation technique of high quality Si/CoSi2/Si double heterostructures and fine patterning of CoSi2 electrodes were developed using self-aligned and two-step molecular beam epitaxy (MBE). In addition, a permeable base transistor (PBT) was successfully fabricated, which showed a high mutual conductance (gm) of 42 mS mm-1. © 1990.

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页码：275 / 282

页数：8

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