OXIDE BARRIERS TO THE FORMATION OF REFRACTORY SILICIDES

被引：22

作者：

SILVERSMITH, DJ

RATHMAN, DD

MOUNTAIN, RW

机构：

来源：

THIN SOLID FILMS | 1982年 / 93卷 / 3-4期

关键词：

D O I：

10.1016/0040-6090(82)90147-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：413 / 419

页数：7

共 16 条

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[9] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].

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[10] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J].

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IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) :474-482

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