EFFECT OF BIAS ON RADIATION-INDUCED PARAMAGNETIC DEFECTS AT THE SILICON-SILICON DIOXIDE INTERFACE

被引：121

作者：

LENAHAN, PM

DRESSENDORFER, PV

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 06期

关键词：

D O I：

10.1063/1.93583

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：542 / 544

页数：3

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