SI2H6 DOPING OF INP IN GAS-SOURCE MOLECULAR-BEAM EPITAXY USING TRIETHYLINDIUM AND PHOSPHINE

被引：4

作者：

ANDO, H

OKAMOTO, N

SANDHU, A

FUJII, T

机构：

[1] Fujitsu Laboratories Ltd., Atsugi, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 10A期

关键词：

GSMBE; MOMBE; CBE; N-INP; DOPING; SI; DISILANE; TRIETHYLINDIUM; PHOSPHINE;

D O I：

10.1143/JJAP.30.L1696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Disilane was shown to be an effective alternative gaseous dopant source in gas-source MBE growth of n-type InP using triethylindium and phosphine. The epilayers could be successfully doped to carrier concentrations between 7.8 x 10(16) cm-3 and 1.4 x 10(18) cm-3 with disilane flow rates between 0.6 and 8.5 sccm. From a SIMS depth profile of structures composed of several layers grown with various disilane flow rates, no segregation or memory effects was observed. Electron mobilities of the epilayers were comparable to the best data obtained with other growth method. We also found that the introduction of disilane affects the growth rates of InP layers.

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收藏

页码：L1696 / L1698

页数：3

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