EFFECT OF HYDROGEN MOLECULES ON GROWTH-RATES OF GAAS IN GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：15

作者：

MARUNO, S ^{[1
]}

NOMURA, Y ^{[1
]}

OGATA, H ^{[1
]}

GOTODA, M ^{[1
]}

MORISHITA, Y ^{[1
]}

机构：

[1] MITSUBISHI ELECTR CO,CENT RES LAB,AMAGASAKI,HYOGO 661,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 97卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(89)90555-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：578 / 582

页数：5

共 14 条

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[2] CHEMICAL BEAM EPITAXIAL-GROWTH OF HIGH-PURITY GAAS USING TRIETHYLGALLIUM AND ARSINE
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[3] GALLIUM-INDUCED AND ARSENIC-INDUCED OSCILLATIONS OF INTENSITY OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION IN THE GROWTH OF (001) GAAS BY CHEMICAL BEAM EPITAXY
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) : 2302 - 2307
[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TRIETHYLGALLIUM AND ARSINE
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ISHII, M
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[5] ON THE DESIGN AND CHARACTERIZATION OF A NOVEL ARSINE CRACKING FURNACE UTILIZING CATALYTIC DECOMPOSITION OF ASH3 TO YIELD A PURELY MONOMERIC SOURCE OF ARSENIC FOR MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 280 - 284
[6] KIMURA K, 1987, JAPAN APPL PHYS, V26, P671
[7] SUBSTRATE-TEMPERATURE DEPENDENCE OF GAAS, GALNAS, AND GAALAS GROWTH-RATES IN METALORGANIC MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (23) : 1907 - 1909
[8] EFFECTS OF HYDROGEN ON GROWTH-MECHANISM OF GAAS IN CHEMICAL BEAM EPITAXY
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AOYAGI, Y
NAMBA, S
DEN, S
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[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 265 - 269
[9] A COMPARATIVE-STUDY OF GA(CH3)3 AND GA(C2H5)3 IN THE MOMBE OF GAAS
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HEYEN, M
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[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 74 (02) : 292 - 300
[10] A MODEL FOR THE SURFACE CHEMICAL-KINETICS OF GAAS DEPOSITION BY CHEMICAL-BEAM EPITAXY
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[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) : 877 - 887

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