LOW-ENERGY X-RAY AND ELECTRON DAMAGE TO IGFET GATE INSULATORS

被引：37

作者：

REISMAN, A

MERZ, CJ

MALDONADO, JR

MOLZEN, WW

机构：

[1] N CAROLINA STATE UNIV, RALEIGH, NC 27650 USA

[2] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 06期

关键词：

D O I：

10.1149/1.2115859

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1404 / 1409

页数：6

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