INFLUENCE OF SURFACE FLUORINATION ON THE OXIDATION OF AMORPHOUS-SILICON BY ATOMIC OXYGEN AT 300-K

被引:1
作者
CLAASSEN, WCM
SCHMITZ, RWAH
DIELEMAN, J
机构
关键词
D O I
10.1016/0169-4332(89)90227-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:292 / 296
页数:5
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共 16 条
[1]   FLUORINE-ENHANCED PLASMA GROWTH OF NATIVE LAYERS ON SILICON [J].
CHANG, RPH ;
CHANG, CC ;
DARACK, S .
APPLIED PHYSICS LETTERS, 1980, 36 (12) :999-1002
[2]   AN INSITU INFRARED STUDY ON THE INTERACTION OF OXYGEN PLASMAS WITH SI AND FLUORINE PLASMAS WITH SIO2 SURFACES [J].
CLAASSEN, WCM ;
DIELEMAN, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1450-1452
[3]   AN INSITU INFRARED STUDY OF THE ROOM-TEMPERATURE OXIDATION OF SILICON WITH ATOMIC AND MOLECULAR-OXYGEN [J].
CLAASSEN, WCM ;
SCHMITZ, RWAH ;
DIELEMAN, J .
APPLIED SURFACE SCIENCE, 1989, 36 (1-4) :240-246
[4]  
DIAS AG, 1987, PHYSICS TECHNOLOGY A, P359
[5]   THERMAL-DECOMPOSITION OF A SILICON-FLUORIDE ADLAYER - EVIDENCE FOR SPATIALLY INHOMOGENEOUS REMOVAL OF A SINGLE MONOLAYER OF THE SILICON SUBSTRATE [J].
ENGSTROM, JR ;
NELSON, MM ;
ENGEL, T .
PHYSICAL REVIEW B, 1988, 37 (11) :6563-6566
[6]   BONDING OF FLUORINE IN AMORPHOUS HYDROGENATED SILICON [J].
FANG, CJ ;
LEY, L ;
SHANKS, HR ;
GRUNTZ, KJ ;
CARDONA, M .
PHYSICAL REVIEW B, 1980, 22 (12) :6140-6148
[7]   SURFACE-MORPHOLOGY OF OXIDIZED AND ION-ETCHED SILICON BY SCANNING TUNNELING MICROSCOPY [J].
FEENSTRA, RM ;
OEHRLEIN, GS .
APPLIED PHYSICS LETTERS, 1985, 47 (02) :97-99
[8]   ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON [J].
FLITSCH, R ;
RAIDER, SI .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :305-308
[9]   ELECTRON ESCAPE DEPTH IN SILICON [J].
KLASSON, M ;
BERNDTSSON, A ;
HEDMAN, J ;
NILSSON, R ;
NYHOLM, R ;
NORDLING, C .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 3 (06) :427-434
[10]   EFFECTS OF FLUORINE IMPLANTATION ON THE KINETICS OF DRY OXIDATION OF SILICON [J].
KUPER, FG ;
DEHOSSON, JTM ;
VERWEY, JF .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :985-990