LANGMUIR DIAGNOSTICS OF AN RF-MAGNETRON DISCHARGE USED FOR ION-ASSISTED GROWTH OF PBTE EPILAYERS

The plasma potential and the electron density and electron temperature of an rf magnetron discharge used for the ion-assisted growth of PbTe epilayers on BaF2 are measured using Langmuir probe diagnostics. The effect of rf potentials at the probe on the measured plasma parameters is reduced by driving the probe to follow the plasma potential. The discharge parameters are determined as a function of substrate bias voltage and substrate rf power. The ion energy and flux necessary for the epitaxial growth of (111) PbTe on (111) BaF2 are determined.