SUBSTITUTIONAL PLACEMENT OF PHOSPHORUS IN ION-IMPLANTED SILICON BY RECRYSTALLIZING AMORPHOUS CRYSTALLINE INTERFACE

被引：21

作者：

SADANA, DK

WASHBURN, J

MAGEE, CW

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

[2] RCA CORP LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 06期

关键词：

D O I：

10.1063/1.332412

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3479 / 3484

页数：6

共 23 条

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[6] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J].

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[7]

FLETCHER J, 1980, I PHYSICS C SERIES, V52, P153

[8] DECHANNELLING OF MEV HE IONS BY TWINNED REGIONS IN IMPLANTED SI CRYSTALS [J].

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MAYER, JW ;

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RECHTIN, MD .

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[9]

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[10]

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