HIGH-TEMPERATURE GROWTH-RATE IN MOCVD GROWTH OF ALGAAS

被引：10

作者：

SOGA, T

TAKAHASHI, Y

SAKAI, S

UMENO, M

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90413-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：169 / 175

页数：7

共 17 条

[11] ON THE REACTION-MECHANISM OF GAAS MOCVD [J].

NISHIZAWA, J ;

KURABAYASHI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :413-417

[12] DEPOSITION OF GAAS EPITAXIAL LAYERS BY ORGANOMETALLIC CVD - TEMPERATURE AND ORIENTATION DEPENDENCE [J].

REEP, DH ;

GHANDHI, SK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) :675-680

[13] EXAMINATION OF PRODUCT CATALYZED REACTION OF TRIMETHYLGALLIUM WITH PHOSPHINE AND MECHANISM OF CHEMICAL VAPOR-DEPOSITION OF GALLIUM-PHOSPHIDE AND GALLIUM-ARSENIDE [J].

SCHLYER, DJ ;

RING, MA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (04) :569-573

[14] VAPOURS OF ELEMENTS [J].

SIEGEL, B .

QUARTERLY REVIEWS, 1965, 19 (02) :77-&

[15] VPE GROWTH OF ALXGA1-XAS [J].

STRINGFELLOW, GB ;

HALL, HT .

JOURNAL OF CRYSTAL GROWTH, 1978, 43 (01) :47-60

[16] SOLID COMPOSITION AND GROWTH-RATE OF GA1-XALXAS GROWN EPITAXIALLY BY MOCVD [J].

TAKAHASHI, Y ;

SOGA, T ;

SAKAI, S ;

UMENO, M ;

HATTORI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (09) :1357-1360

[17]

TAKAHASHI Y, UNPUB JAPAN J APPL P

← 1 2 →